CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications -
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To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address rel ... Full description
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Description
More Information
| Publisher | Cambridge University Press |
|---|---|
| Release year | 2016 |
| Cover type | Hardcover |
| EAN | 9781605111285 |