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Doping Engineering for Front-End Processing -

English
2008-10-17
€158.30 €197.87

-20% with code BOOKS

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Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate d ... Full description

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Description

Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.

More Information

Publisher Cambridge University Press
Release year 2008
Cover type Hardcover
EAN 9781605110400
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€158.30 €197.87