The detection of the gamma radiation with practical and low cost methods is still a point of interest for the scientists and engineers work on this field. Especially, in the last decade, improved solid state technology have provided the new generation parts which can be used in the radiation detection devices. The purpose of this study was to design and to produce a low cost gamma-ray detector by using silicon PIN photodiodes and on-shelf components.The principle of the detection is based on the interaction of the gamma-rays with the electrons in the crystal lattice. The value of induced photocurrent, caused by an incident gamma radiation, in the silicon substance with typical thickness of 100-300 ¿m is only a few pA. Therefore, it''s generally hard to separate this induced photocurrent from the noise and to process it to obtain an observable signal. Although the detection efficiency is only 2% at 60 keV, it''s good enough to use it for monitoring the beam position in high-energy physics experiments. A single detector can be used for monitoring of the radon activity in the fault lines or monitoring gamma activity of water circulation of a nuclear reactor.