Gate Stack Engineering for Emerging Polarization based Non-volatile Memories - Milan Pesic
-20% with code BOOKS
Shipping in 12-18 days
30-day return policy
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even th ... Full description
You May Also Like
TOP
INCOSE Systems Engineering Handbook
-20% with code BOOKS
In stock at our supplier
TOP
If Anyone Builds It, Everyone Dies: The Case Against Superintelligent AI
Eliezer Yudkowsky, Nate Soares
-20% with code BOOKS
In stock at our supplier
TOP
The Design of Everyday Things
-20% with code BOOKS
In stock at our supplier
TOP
Open Circuits: The Inner Beauty of Electronic Components
Eric Schlaepfer, Windell Oskay
-20% with code BOOKS
In stock at our supplier
TOP
Get started with MicroPython on Raspberry Pi Pico: The Official Raspberry Pi Pico Guide
-20% with code BOOKS
In stock at our supplier
TOP
Practical Electronics for Inventors
-20% with code BOOKS
In stock at our supplier
TOP
Nucleo Boards Programming with the STM32CubeIDE: Hands-on in more than 50 projects
-20% with code BOOKS
In stock at our supplier
TOP
Data-Driven Science and Engineering: Machine Learning, Dynamical Systems, and Control
Steven L. Brunton, J. Nathan Kutz
-20% with code BOOKS
In stock at our supplier
TOP
Fundamentals of Aerodynamics ISE
Christopher Cadou, John D. Anderson
-20% with code BOOKS
In stock at our supplier
TOP
Black Holes: The Key to Understanding the Universe
-20% with code BOOKS
In stock at our supplier
TOP
KiCad Like A Pro - Fundamentals and Projects: Getting started with the world's best open-source PCB tool
-20% with code BOOKS
In stock at our supplier
TOP
How To Read Water: Clues & Patterns from Puddles to the Sea
-20% with code BOOKS
In stock at our supplier
TOP
Foundations of Flavor: The Noma Guide to Fermentation: Including Step-By-Step Information on Making and Cooking with: Koji, Kombuchas, Shoyus, Misos, Vinegars, Garums, Lacto-Ferments and black Fruits Vegetables
-20% with code BOOKS
In stock at our supplier
TOP
Make: Electronics: Learning by Discovery: A hands-on primer for the new electronics enthusiast
-20% with code BOOKS
In stock at our supplier
TOP
The Idea Factory: Bell Labs and the Great Age of American Innovation
-20% with code BOOKS
In stock at our supplier
TOP
Flowers For Algernon: A Modern Literary Classic
-20% with code BOOKS
In stock at our supplier
TOP
Professional SMD Assembly: Practical Low-Cost Methods for Reliable PCB Production
-20% with code BOOKS
In stock at our supplier
TOP
Blood in the Machine: The Origins of the Rebellion Against Big Tech
-20% with code BOOKS
In stock at our supplier
Description
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
More Information
| Author | Milan Pesic |
|---|---|
| Publisher | BoD - Books on Demand |
| Release year | 2017 |
| Cover type | Softcover |
| EAN | 9783744867887 |