30% off all books with the code: BOOKS
  • check 10+ million books
  • check New arrivals every day
  • check Trusted by 1M+ customers
  • check Great prices & discounts
  • check Shipping across Europe

Process and Device Simulation for MOS-VLSI Circuits -

English
2011-10-09
€64.67 €92.38

-30% with code BOOKS

In stock at our supplier

Shipping in 12-18 days

30-day return policy

P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,0 ... Full description

You May Also Like

Description

P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ­ ent levels (government agencies, private industries, defense de­ partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta­ tistical fluctuations.

More Information

Publisher Springer Netherlands
Series NATO Science Series E:
Release year 2011
Cover type Softcover
EAN 9789400968448
Write Your Own Review
You're reviewing: Process and Device Simulation for MOS-VLSI Circuits
Your Rating:

Goodreads Reviews

€64.67 €92.38